Self-correcting memory 기능 탑재로 진행성 불량 방지 기능 지원
Bit 단위 에러를 자동으로 보정 하여 tag 에러 방지기능
전세계 최고의 Reading 감도
전세계 최고의 Write 감도 ( 낮은 출력에도 Data Write 가능 )
Unique한 48Bit TID 값을 제공하여 보안 및 복제방지에 적합
타사 Chip 보다 낮은 온도에서도 사용 가능
읽고 쓰기 기능 200,000번으로 기존 대비 2배 이상 사용 가능
| Features | Benefits | Description |
|---|---|---|
 | A unique and robust error correcting memory architecture. This architecture detects and fixes single bit errors and detects and flags dual bit errors. | The most robust memory in the RFID industry. Immune to single bit errors (cosmic rays, chip damage etc). Provides customers reassurance the stored data is protected and data loss/corruption minimized. |
| Best in class read sensitivity | -22.5 dBm | Allows smaller tags to be designed or larger read & write distances to be realized. |
| Best in class write sensitivity | -19 dBm | |
| Best in class memory reliability | 200,000 write cycles, two times that of competitors | More robust memory for high-write applications |
| 96 and 128b EPC | Support EPC size up to 128b for flexibility. | Additional 32b allows storing of larger identifying information. |
128b user memory | User memory for storage of additional application data. | Enables Higgs-EC to be used in applications where more memory is required unlike many competitive IC’s. |
Self-correcting memory 기능 탑재로 진행성 불량 방지 기능 지원
Bit 단위 에러를 자동으로 보정 하여 tag 에러 방지기능
전세계 최고의 Reading 감도
전세계 최고의 Write 감도 ( 낮은 출력에도 Data Write 가능 )
Unique한 48Bit TID 값을 제공하여 보안 및 복제방지에 적합
타사 Chip 보다 낮은 온도에서도 사용 가능
읽고 쓰기 기능 200,000번으로 기존 대비 2배 이상 사용 가능
| Features | Benefits | Description |
|---|---|---|
| A unique and robust error correcting memory architecture. This architecture detects and fixes single bit errors and detects and flags dual bit errors. | The most robust memory in the RFID industry. Immune to single bit errors (cosmic rays, chip damage etc). Provides customers reassurance the stored data is protected and data loss/corruption minimized. |
| Best in class read sensitivity | -22.5 dBm | Allows smaller tags to be designed or larger read & write distances to be realized. |
| Best in class write sensitivity | -19 dBm | |
| Best in class memory reliability | 200,000 write cycles, two times that of competitors | More robust memory for high-write applications |
| 96 and 128b EPC | Support EPC size up to 128b for flexibility. | Additional 32b allows storing of larger identifying information. |
128b user memory | User memory for storage of additional application data. | Enables Higgs-EC to be used in applications where more memory is required unlike many competitive IC’s. |
